Simulation and measurement of thermal stress in quasi-monolithic integration technology (QMIT)

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2001, Pages 715-720

  Joodaki, M ^a   Kompa, G ^a   Leinhos, T ^a   Kassing, R ^a   Hillmer, H ^a  

^a UNIVERSITY OF KASSEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELASTICITY; FINITE ELEMENT METHOD; MONOLITHIC INTEGRATED CIRCUITS; PROBES; RELIABILITY; SEMICONDUCTING GALLIUM ARSENIDE; SERVICE LIFE; STRESS CONCENTRATION; TEMPERATURE; THERMAL STRESS; THERMAL VARIABLES MEASUREMENT;

EMBEDDED DEVICES; PELTIER ELEMENT; QUASI-MONOLITHIC INTEGRATION TECHNOLOGY; SCANNING PROBE MICROSCOPY;

ELECTRONICS PACKAGING;

EID: 0034825919     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. Air bridge based planar hybrid technology for microwave and millimetrewave applications
2. 12 GHz coplanar quasi-monolithic oscillator
3. GaAs FET characterization in a quasi-monolithic Si environment
4. Quasi monolithic hybrid technology based on Si micro-machining and low-temperature thin film processing
5. Static thermal design of Quasi-Monolithic Integrated Technology (QMIT)
6. Optimization of thermal resistance in different structures of Quasi-Monolithic integration technology