-
1
-
-
0027615212
-
Theory, design and performance of extended tuning range semiconductor lasers with sampled gratings
-
V. Jayaraman, Z. M. Chuang, and L. A. Coldren, "Theory, design and performance of extended tuning range semiconductor lasers with sampled gratings," IEEE J. Quantum Electron., vol. QE-29, pp. 1824-1834, 1993.
-
(1993)
IEEE J. Quantum Electron.
, vol.QE-29
, pp. 1824-1834
-
-
Jayaraman, V.1
Chuang, Z.M.2
Coldren, L.A.3
-
2
-
-
0742293620
-
Widely tunable laser diodes and their control
-
G. Morthier and G. Sarlet, "Widely tunable laser diodes and their control," in Proc. 25th Eur. Conf. Optical Communication (ECOC), vol. II, Nice, France, Sept. 26-30, 1999, pp. 118-119.
-
Proc. 25th Eur. Conf. Optical Communication (ECOC), Vol. II, Nice, France, Sept. 26-30, 1999
, pp. 118-119
-
-
Morthier, G.1
Sarlet, G.2
-
3
-
-
0030169205
-
Tunable laser diode using a nickel micromachined external mirror
-
Y. Uenishi, K. Honma, and S. Nagaoka, "Tunable laser diode using a nickel micromachined external mirror," Electron. Lett., vol. 32, pp. 1207-1208, 1996.
-
(1996)
Electron. Lett.
, vol.32
, pp. 1207-1208
-
-
Uenishi, Y.1
Honma, K.2
Nagaoka, S.3
-
4
-
-
0031673093
-
Top-emitting micromechanical VCSEL with a 31.6 nm tuning range
-
M. Y. Li, G. S. Li, and C. J. Chang-Hasnain, "Top-emitting micromechanical VCSEL with a 31.6 nm tuning range," IEEE Photon. Technol. Lett., vol. 10, pp. 18-20, 1998.
-
(1998)
IEEE Photon. Technol. Lett.
, vol.10
, pp. 18-20
-
-
Li, M.Y.1
Li, G.S.2
Chang-Hasnain, C.J.3
-
5
-
-
0032028619
-
Micromachined widely tunable vertical cavity laser diodes
-
F. Sugihwo, M. C. Larson, and J. S. Harris, "Micromachined widely tunable vertical cavity laser diodes," J. Microelectromech. Syst., vol. 7, pp. 48-55, 1998.
-
(1998)
J. Microelectromech. Syst.
, vol.7
, pp. 48-55
-
-
Sugihwo, F.1
Larson, M.C.2
Harris, J.S.3
-
6
-
-
0032688595
-
2 mW CW singlemode operation of a tunable 1550 nm vertical cavity surface emitting laser with 50 nm tuning range
-
D. Vakhshoori, P. Tayebati, C.-C. Lu, M. Azimi, P. Wang, J.-H. Zhou and E. Canoglu, "2 mW CW singlemode operation of a tunable 1550 nm vertical cavity surface emitting laser with 50 nm tuning range," Electron. Lett., vol. 35, pp. 900-901, 1999.
-
(1999)
Electron. Lett.
, vol.35
, pp. 900-901
-
-
Vakhshoori, D.1
Tayebati, P.2
Lu, C.-C.3
Azimi, M.4
Wang, P.5
Zhou, J.-H.6
Canoglu, E.7
-
7
-
-
0028368420
-
Littrow-mounted diffraction grating cavity
-
H. Lotem, "Littrow-mounted diffraction grating cavity," Appl. Opt., vol. 33, pp. 930-934, 1994.
-
(1994)
Appl. Opt.
, vol.33
, pp. 930-934
-
-
Lotem, H.1
-
8
-
-
0017988674
-
Spectrally narrow pulsed dye laser without a beam expander
-
M. G. Littman and H. J. Metcalf, "Spectrally narrow pulsed dye laser without a beam expander," Appl. Opt., vol. 17, pp. 2224-2227, 1978.
-
(1978)
Appl. Opt.
, vol.17
, pp. 2224-2227
-
-
Littman, M.G.1
Metcalf, H.J.2
-
9
-
-
0035471899
-
Mode-hop-free tuning over 80 GHz of an extended cavity diode laser without antireflection coating
-
C. Petridis, I. D. Lindsay, D. J. M. Stothard, and M. Ebrahimzadeh, "Mode-hop-free tuning over 80 GHz of an extended cavity diode laser without antireflection coating," Rev. Sci. Inst., vol. 72, pp. 3811-3815, 2001.
-
(2001)
Rev. Sci. Inst.
, vol.72
, pp. 3811-3815
-
-
Petridis, C.1
Lindsay, I.D.2
Stothard, D.J.M.3
Ebrahimzadeh, M.4
-
10
-
-
0022752796
-
External cavity semiconductor laser with 15 nm continuous tuning range
-
F. Favre, L. D. Guen, J. C. Simon, and B. Landousies, "External cavity semiconductor laser with 15 nm continuous tuning range," Electron. Lett., vol. 22, pp. 795-796, 1986.
-
(1986)
Electron. Lett.
, vol.22
, pp. 795-796
-
-
Favre, F.1
Guen, L.D.2
Simon, J.C.3
Landousies, B.4
-
11
-
-
0026003582
-
82 nm of continuous tunability for an external cavity semiconductor laser
-
F. Favre and D. Le Guen, "82 nm of continuous tunability for an external cavity semiconductor laser," Electron. Lett., vol. 27, pp. 183-184, 1991.
-
(1991)
Electron. Lett.
, vol.27
, pp. 183-184
-
-
Favre, F.1
Le Guen, D.2
-
12
-
-
0027647462
-
Continuously tuned external cavity semiconductor laser
-
W. R. Trutna and L. F. Stokes, "Continuously tuned external cavity semiconductor laser," J. Lightwave Technol., vol. 11, pp. 1279-1286, 1993.
-
(1993)
J. Lightwave Technol.
, vol.11
, pp. 1279-1286
-
-
Trutna, W.R.1
Stokes, L.F.2
-
13
-
-
0024277815
-
Miniature packaged external-cavity semiconductor laser with 50 GHz continuous electrical tuning range
-
J. Mellis, S. A. Al-Chalabi, K. H. Cameron, R. Wyatt, J. C. Regnault, W. J. Devlin, and M. C. Brain, "Miniature packaged external-cavity semiconductor laser with 50 GHz continuous electrical tuning range," Electron. Lett., vol. 24, pp. 988-989, 1988.
-
(1988)
Electron. Lett.
, vol.24
, pp. 988-989
-
-
Mellis, J.1
Al-Chalabi, S.A.2
Cameron, K.H.3
Wyatt, R.4
Regnault, J.C.5
Devlin, W.J.6
Brain, M.C.7
-
14
-
-
0025387753
-
242 nm continuous tuning from a GRIN-SC-MQW-BH InGaAsP laser in an extended cavity
-
M. Bagley, R. Wyatt, D. J. Elton, H. J. Wickes, P. C. Spurdens, C. P. Seltzer, D. M. Cooper, and W. J. Devlin, "242 nm continuous tuning from a GRIN-SC-MQW-BH InGaAsP laser in an extended cavity," Electron. Lett., vol. 26, pp. 267-269, 1990.
-
(1990)
Electron. Lett.
, vol.26
, pp. 267-269
-
-
Bagley, M.1
Wyatt, R.2
Elton, D.J.3
Wickes, H.J.4
Spurdens, P.C.5
Seltzer, C.P.6
Cooper, D.M.7
Devlin, W.J.8
-
15
-
-
0035741291
-
Widely tunable external cavity diode laser using a MEMS electrostatic rotary actuator
-
J. D. Berger, Y. Zhang, J. D. Grade, H. Lee, S. Hrinya, H. Herman, A. Fennema, A. Tselikov, and D. Anthon, "Widely tunable external cavity diode laser using a MEMS electrostatic rotary actuator," in Proc. 27th European Conf. on Optical Communications, vol. 2, Amsterdam, Sep.-Oct. 30-4, 2001, pp. 198-199.
-
Proc. 27th European Conf. on Optical Communications, Vol. 2, Amsterdam, Sep.-Oct. 30-4, 2001
, pp. 198-199
-
-
Berger, J.D.1
Zhang, Y.2
Grade, J.D.3
Lee, H.4
Hrinya, S.5
Herman, H.6
Fennema, A.7
Tselikov, A.8
Anthon, D.9
-
16
-
-
0029419192
-
Advanced silicon etching using high density plasmas
-
J. K. Bhardwaj and H. Ashraf, "Advanced silicon etching using high density plasmas," Proc. SPIE, vol. 2639, pp. 224-233, 1995.
-
(1995)
Proc. SPIE
, vol.2639
, pp. 224-233
-
-
Bhardwaj, J.K.1
Ashraf, H.2
-
17
-
-
0030100650
-
Silicon fusion bonding and deep reactive ion etching: A new technology for microstructures
-
E. H. Klaassen, K. Petersen, J. M. Noworolski, J. Logan, N. I. Maluf, J. Brown, C. Storment, W. McCulley, and T. A. Kovacs, "Silicon fusion bonding and deep reactive ion etching: A new technology for microstructures," Sens. Actuators, vol. A52, pp. 132-139, 1995.
-
(1996)
Sens. Actuators
, vol.A52
, pp. 132-139
-
-
Klaassen, E.H.1
Petersen, K.2
Noworolski, J.M.3
Logan, J.4
Maluf, N.I.5
Brown, J.6
Storment, C.7
Mcculley, W.8
Kovacs, T.A.9
-
18
-
-
0030679958
-
Vertical mirrors fabricated by reactive ion etching for optical fiber switching applications
-
C. Marxer, M.-A. Gretillat, N. F. de Rooiji, R. Battig, O. Anthamatten, B. Valk, and B. Vogel, "Vertical mirrors fabricated by reactive ion etching for optical fiber switching applications," in Proc. 10th Workshop on MEMS, Nagoya, Japan, 1997, pp. 49-45.
-
Proc. 10th Workshop on MEMS, Nagoya, Japan, 1997
, pp. 49-45
-
-
Marxer, C.1
Gretillat, M.-A.2
De Rooiji, N.F.3
Battig, R.4
Anthamatten, O.5
Valk, B.6
Vogel, B.7
-
19
-
-
0037245602
-
External cavity laser with a vertically-etched silicon blazed grating
-
A. Lohmann and R. R. A. Syms, "External cavity laser with a vertically-etched silicon blazed grating," IEEE Photon. Technol. Lett., vol. 15, pp. 120-122, 2003.
-
(2003)
IEEE Photon. Technol. Lett.
, vol.15
, pp. 120-122
-
-
Lohmann, A.1
Syms, R.R.A.2
-
20
-
-
84963781938
-
Tuning mechanism for a MEMS external cavity laser
-
R. R. A. Syms, and A. Lohmann, "Tuning mechanism for a MEMS external cavity laser," presented at the IEEE/LEOS Int. Conf. on Optical MEMS and their Applications, Lugano, Switzerland, Aug. 20-23, 2002, paper ThD4.
-
IEEE/LEOS Int. Conf. on Optical MEMS and Their Applications, Lugano, Switzerland, Aug. 20-23, 2002, Paper ThD4
-
-
Syms, R.R.A.1
Lohmann, A.2
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