SCOPUS 정보 검색 플랫폼

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2003, Pages 187-190

Reliability characteristics of 200 GHz fT/285 GHz fMAX SiGe HBTs

(6) Freeman, Greg a Yang, Zhijian a Guarin, Fernando a Rieh, Jae Sung a Ahlgren, David a Hostetter, Ed a

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DEGRADATION; ELECTRIC BREAKDOWN; ELECTRIC CHARGE; ELECTRIC CURRENTS; INTEGRATED CIRCUIT LAYOUT; INTERFACES (MATERIALS); POLYSILICON; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS; THERMAL STRESS;

AVALANCHE CHARGE; CURRENT STRESS; RELIABILITY ASSESSMENT; SEMICONDUCTING SILICON GERMANIUM;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0348195872 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (3)

References (6)

1
- 0036575795
- T in a manufacturable technology
- May
- T in a Manufacturable Technology," IEEE Electron Device Letters, vol. 23 no. 5, May 2002 pp. 258-260
- (2002) IEEE Electron Device Letters , vol.23 , Issue.5 , pp. 258-260
- Jagannathan, B.¹ Khater, M.²

2
- 0038649073
- T of 350GHz
- T of 350GHz," Int'l Reliability Physics Symposium, March 2003, pp 332-343
- Int'l Reliability Physics Symposium, March 2003 , pp. 332-343
- Freeman, G.¹ Rieh, J.-S.² Jagannathan, B.³ Yang, Z.⁴ Guarin, F.⁵ Joseph, A.⁶ Ahlgren, D.⁷

3
- 0037634474
- Avalanche current induced hot carrier degradation in 200GHz SiGe heterojunction bipolar transistors
- Z. Yang, F. Guarin, E. Hostetter, G. Freeman, "Avalanche Current Induced Hot Carrier Degradation in 200GHz SiGe Heterojunction Bipolar Transistors," Proceedings Int'l Reliability Physics Symposium, March 2003, pp. 339-343
- Proceedings Int'l Reliability Physics Symposium, March 2003 , pp. 339-343
- Yang, Z.¹ Guarin, F.² Hostetter, E.³ Freeman, G.⁴

4
- 0347119672
- Reliability of high-speed SiGe heterojunction bipolar transistors under very high forward current density
- June
- J.-S. Rieh, K. Watson, F. Guarin, Z. Yang, P.-C. Wang, A. Joseph, G. Freeman, S. Subbanna, "Reliability of High-Speed SiGe Heterojunction Bipolar Transistors under Very High Forward Current Density," IEEE Trans. Device and Material Reliability, vol 3, no. 2 June 2003 pp. 31-38
- (2003) IEEE Trans. Device and Material Reliability , vol.3 , Issue.2 , pp. 31-38
- Rieh, J.-S.¹ Watson, K.² Guarin, F.³ Yang, Z.⁴ Wang, P.-C.⁵ Joseph, A.⁶ Freeman, G.⁷ Subbanna, S.⁸

5
- 84942337310
- Impact of inter-metal dielectric on the reliability of SiGe NPN HBTs after high temperature electrical operation
- K. Hoffmann, G. Bruegmann, M. Seck, "Impact of Inter-Metal Dielectric on the Reliability of SiGe NPN HBTs after High Temperature Electrical Operation," IEEE Topical Meeting on Si Monolithic Integrated Circuits in RF Systems, April 2003, pp 126-129
- IEEE Topical Meeting on Si Monolithic Integrated Circuits in RF Systems, April 2003 , pp. 126-129
- Hoffmann, K.¹ Bruegmann, G.² Seck, M.³

6
- 0030785233
- Degradation of silicon bipolar junction transistors at high forward current densities
- Jan
- M. Carroll, A. Neugroschel, C.T. Sah, "Degradation of Silicon Bipolar Junction Transistors at High Forward Current Densities", IEEE Trans. Electron Devices, vol 44 no. 1, Jan 1997, pp. 110-117
- (1997) IEEE Trans. Electron Devices , vol.44 , Issue.1 , pp. 110-117
- Carroll, M.¹ Neugroschel, A.² Sah, C.T.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.