Modelling of semi-conductor diodes made of high defect concentration, irradiated, high resistivity and semi-insulating material: The internal field

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 517, Issue 1-3, 2004, Pages 109-120

  Dehimi, L ^a   Sengouga, N ^a   Jones, B K ^b  

^a UNIVERSITY OF BISKRA   (Algeria)

^b LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

Diode; Modelling; Radiation damage; Semi conductor; Semi insulating

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; ELECTRIC SPACE CHARGE; ELECTRON ENERGY LEVELS; ELECTRON TRAPS; ELECTRONS; FERMI LEVEL; HIGH ENERGY PHYSICS; INSULATING MATERIALS; IONIZATION; IRRADIATION; PARTICLE DETECTORS; RADIATION DAMAGE; RELAXATION PROCESSES; SEMICONDUCTOR DOPING;

CHARGE COLLECTION; RADIATION DAMAGE DEVICES;

SEMICONDUCTOR DIODES;

EID: 0348136424     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2003.10.090     Document Type: Article

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