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Physical Review Letters

Volumn 91, Issue 20, 2003, Pages

Changing the diffusion mechanism of ge-si dimers on si(001) using an electric field

(4) Sanders, L M a Stumpf, R a Mattsson, T R a Swartzentruber, B S a

a SANDIA NATIONAL LABORATORIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; APPROXIMATION THEORY; CRYSTAL LATTICES; DIFFUSION; ELECTRIC FIELD EFFECTS; GERMANIUM; NUMERICAL ANALYSIS; PROBABILITY DENSITY FUNCTION; SCANNING TUNNELING MICROSCOPY; SILICON;

DIFFUSION MECHANISM; GENERALIZED GRADIENT APPROXIMATION; LOCAL DENSITY APPROXIMATION;

DIMERS;

EID: 0348107279 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.91.206104 Document Type: Article

Times cited : (17)

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