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Thin Solid Films

Volumn 446, Issue 1, 2004, Pages 132-137

The effect of Cr barrier on interfacial reaction of Au/Zn/Au/Cr/Au contacts to p-type InGaAs/InP

(2) Huang, J S a Vartuli, C B b

a Ortel (United States)

b AGERE SYSTEMS (United States)

Author keywords

Contacts; Diffusion; Metallization; Semiconductors

Indexed keywords

CHEMICAL MODIFICATION; CONCENTRATION (PROCESS); DEPOSITION; DIFFUSION; ELECTRIC RESISTANCE; ENERGY DISPERSIVE SPECTROSCOPY; IMAGING TECHNIQUES; INTERFACES (MATERIALS); METALLIZING; MORPHOLOGY; OHMIC CONTACTS; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE REACTIONS; TRANSMISSION ELECTRON MICROSCOPY;

ALLOY REACTIONS; DIFFUSION BARRIER;

OPTOELECTRONIC DEVICES;

EID: 0348042911 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(03)01345-2 Document Type: Article

Times cited : (12)

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