Resonant Gate Tunneling Current in Double-Gate SOI: A Simulation Study

IEEE Transactions on Electron Devices

Volumn 50, Issue 12, 2003, Pages 2579-2581

  Choi, Chang Hoon ^a   Yu, Zhiping ^b   Dutton, Robert W ^a  

^a Stanford University   (United States)

^b TSINGHUA UNIVERSITY   (China)

Author keywords

Asymmetrical DG (ADG); Double gate (DG) silicon on insulator (SOI); Fully depleted (FD); Gate tunneling current; Quantum mechanical theory; Resonant tunneling diodes (RTD); Symmetrical DG with ground plane (SGP)

Indexed keywords

CATHODES; COMPUTER SIMULATION; DIODES; ELECTRIC INSULATORS; ELECTRON TUNNELING; GATES (TRANSISTOR); MOSFET DEVICES; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM WELLS; THRESHOLD VOLTAGE;

ASYMMETRICAL DOUBLE GATES (ADG); GATE TUNNELING CURRENTS; QUANTUM-MECHANICAL THEORY; RESONANT TUNNELING DIODES (RTD);

SILICON ON INSULATOR TECHNOLOGY;

EID: 0347968281     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.820126     Document Type: Article

References (7)

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