On the origin of 1.5 μm luminescence in porous silicon coated with sol-gel derived erbium-doped Fe2O3 films

Journal of Luminescence

Volumn 80, Issue 1-4, 1998, Pages 399-403

  Gaponenko, N V ^a   Mudryi, A V ^a   Sergeev, O V ^a   Stepikhova, M ^b   Palmetshofer, L ^b   Jantsch, W ^b   Pivin, J C ^c   Hamilton, B ^d   Baran, A S ^e   Rat'ko, A I ^e  

^a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^c 91405 Orsay Campus   (France)

^d UNIVERSITY OF MANCHESTER   (United Kingdom)

^e INSTITUTE OF GENERAL AND INORGANIC CHEMISTRY   (Belarus)

Author keywords

Erbium; Photoluminescence; Porous silicon; Sol gel

Indexed keywords

EID: 0347359298     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(98)00137-9     Document Type: Article

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