Deformation of porous silicon lattice caused by absorption/desorption processes

Journal of the Electrochemical Society

Volumn 144, Issue 4, 1997, Pages 1463-1468

  Chelyadinsky, Aleksei R ^b   Dorofeev, Alexander M ^a   Kazuchits, Nikolai M ^b   La Monica, Sandro ^c   Lazarouk, Serguie K ^a   Maiello, Gabriella ^c   Masini, Gianlorenzo ^d   Penina, Nataly M ^b   Stelmakh, Vechteslav F ^b   Bondarenko, Vitaly P ^a   Ferrari, Aldo ^c  

^a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

^b BELARUSIAN STATE UNIVERSITY   (Belarus)

^c SAPIENZA UNIVERSITY OF ROME   (Italy)

^d ROMA TRE UNIVERSITY   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ANNEALING; ANODIC OXIDATION; DESORPTION; LATTICE CONSTANTS; POROUS SILICON; SILICON WAFERS;

LATTICE DEFORMATION; POROUS SILICON LATTICE;

CRYSTAL LATTICES;

EID: 0031124234     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837612     Document Type: Article

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