Erbium and terbium luminescence from sol-gel derived In2O3 films on porous silicon

Physica Status Solidi (A) Applied Research

Volumn 165, Issue 1, 1998, Pages 131-134

  Gaponenko, N V ^a   Mudryi, A V ^a   Sergeev, O V ^a   Borisenko, V E ^a   Pivin, J C ^b   Baran, A S ^c   Stepanova, E A ^c   Ratko, A I ^c   McGilp, J F ^d  

^a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

^b 91405 Orsay Campus   (France)

^c INSTITUTE OF GENERAL AND INORGANIC CHEMISTRY   (Belarus)

^d TRINITY COLLEGE DUBLIN   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ERBIUM; FILM PREPARATION; INDIUM COMPOUNDS; PHOTOLUMINESCENCE; POROUS SILICON; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SOL-GELS; TERBIUM;

OPTICAL ACTIVATION;

OPTICAL FILMS;

EID: 0031649071     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199801)165:1<131::AID-PSSA131>3.0.CO;2-L     Document Type: Article

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