Scalability Simulations for Nanomemory Systems Integrated on the Molecular Scale

Annals of the New York Academy of Sciences

Volumn 1006, Issue , 2003, Pages 312-330

  Ziegler, Matthew M ^a,b   Picconatto, Carl A ^a   Ellenbogen, James C ^a   Dehon, André ^c   Wang, Deli ^d   Zhong, Zhaohui ^d   Lieber, Charles M ^d  

^a MITRE CORPORATION   (United States)

^b UNIVERSITY OF VIRGINIA   (United States)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^d HARVARD UNIVERSITY   (United States)

Author keywords

Computer aided design; Crossbar architectures; Molecular electronics; Nanocircuits; Nanoelectronics; Nanomemory; Nanotechnology; Very large scale integration

Indexed keywords

SILICON; SILICON DIOXIDE;

COMPUTER PROGRAM; CONFERENCE PAPER; DEVICE; DIODE; ELECTRONICS; EVALUATION; METHODOLOGY; SEMICONDUCTOR; SIMULATION;

EID: 0347320477     PISSN: 00778923     EISSN: None     Source Type: Book Series    
DOI: 10.1196/annals.1292.022     Document Type: Conference Paper

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