SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion

Electronics Letters

Volumn 40, Issue 1, 2004, Pages 83-85

  Wernersson, L E ^a   Kabeer, S ^a   Zela, V ^b   Lind, E ^b   Zhang, J ^a   Seifert, W ^b   Kosel, T ^a   Seabaugh, A ^a  

^a University of Notre Dame   (United States)

^b LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITION; CURRENT DENSITY; DOPING (ADDITIVES); ELECTRIC RESISTANCE; PHOTOLITHOGRAPHY; SECONDARY ION MASS SPECTROMETRY; SILICON COMPOUNDS; THERMAL DIFFUSION;

BAND STRUCTURES; GROWTH CHAMBERS;

TUNNEL DIODES;

EID: 0347130073     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20040048     Document Type: Article

References (7)

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3. Wang, J., et al.: 'Silicon tunnel diodes formed by proximity rapid thermal diffusion', IEEE Electron Device Lett., 2003, 24, (2), pp. 93-95
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7. Willoughby, A.F.W., Bonar, J.M., and Paine, A.D.N.: 'Diffusion mechanisms in SiGe alloys', Mater. Res. Soc. Symp. Proc., 1999, 568, pp. 253-264