Structural and Electrical Changes in Polycrystalline Silicon Thin Films That Are Heavily in Situ Boron-Doped and Thermally Oxidized with Dry Oxygen

Chemical Vapor Deposition

Volumn 3, Issue 5, 1997, Pages 271-279

  Boukezzata, Messaoud ^a   Birouk, Boubekeur ^b   Mansour, Farida ^a   Bielle Daspet, Danièle ^c  

^a Universite Mentouri Constantine   (Algeria)

^b Inst Natl d'Electrotechnique Sup   (Algeria)

^c LAAS CNRS   (France)

Author keywords

Boron; Diffusion; LPCVD Si layers; Oxidation; SIMS

Indexed keywords

EID: 0346307720     PISSN: 09481907     EISSN: None     Source Type: Journal    
DOI: 10.1002/cvde.19970030505     Document Type: Article

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