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Volumn 80-81, Issue , 2001, Pages 59-64
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Boron-doped polysilicon: Growth kinetics and structural study of low-pressure chemical vapour deposited films in the case of high doping levels
a
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Author keywords
Boron; Crystallisation; Elaboration; Kinetics; Silicon
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Indexed keywords
AMORPHOUS SILICON;
BORON;
CHEMICAL VAPOR DEPOSITION;
COMPUTER SIMULATION;
CRYSTAL STRUCTURE;
CRYSTALLIZATION;
DOPING (ADDITIVES);
FILM GROWTH;
MATHEMATICAL MODELS;
REACTION KINETICS;
STRUCTURE (COMPOSITION);
BORON DOPED SILICON;
ELABORATION;
LOW PRESSURE CHEMICAL VAPOUR DEPOSITION;
POLYSILICON;
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EID: 0034824545
PISSN: 10120394
EISSN: None
Source Type: Book Series
DOI: 10.4028/www.scientific.net/ssp.80-81.59 Document Type: Conference Paper |
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Times cited : (1)
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References (6)
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