Atomic model for the electrical deactivation of N in Si oxynitrides

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 974-977

  Lee, Eun Cheol ^a   Chang, K J ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Charge trap; Nitrogen; Si oxynitride

Indexed keywords

CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; NITRIDES; NUMERICAL ANALYSIS; STABILITY;

ELECTRICAL DEACTIVATION; OXYNITRIDES;

SEMICONDUCTOR MATERIALS;

EID: 0346685979     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.198     Document Type: Conference Paper

References (13)

1. Aoyama T., Suzuki K., Tashiro H., Toda Y., Yamazaki T., Arimoto Y., Ito T. J. Electrochem. Soc. 140:1993;3624.
2. Ahn J., Kim J., Lo G.Q., Kwong D.L. Appl. Phys. Lett. 60:1992;2809.
3. Jeong S., Oshiyama A. Phys. Rev. Lett. 86:2001;3574.
4. Yasuda M., Fukuda H., Iwabuchi T., Ohno S. Jpn. J. Appl. Phys. 30:1991;3597.
5. Fukuda H., Murai S., Endoh T., Nomura S. J. Appl. Phys. 81:1997;1825.
6. Perdew J.P., Burke K., Ernzerhof M. Phys. Rev. Lett. 77:1996;3865.
7. Lee E.-C., Chang K.J. Phys. Rev. B. 66:2002;233205.
8. Yount J.T., Lenahan P.M., Dunn G.J. IEEE Trans. Nucl. Sci. 39:1992;2211.
9. Oshiyama A. Jpn. J. Appl. Phys. 37:1998;L232.
10. Gusev E.P., Lu H.-C., Garfunkel E.L., Gustafsson T., Green M.L. IBM J. Res. Develop. 43:1999;265.
11. Tamura Y., Shigeno M., Ohkubo S., Irino K., Nakanishi T., Takasaki K. Jpn. J. Appl. Phys. 39:2000;2158.
12. Carr E.C., Ellis K.A., Buhrman R.A. Appl. Phys. Lett. 66:1995;1492.
13. Saks N.S., Ma D.I., Fowler W.B. Appl. Phys. Lett. 67:1995;374.