|
Volumn 39, Issue 4 B, 2000, Pages 2158-2161
|
Impact of nitrogen profile in gate oxynitride on complementary metal oxide semiconductor characteristics
a a a a a a |
Author keywords
CMOS; N2O; Nitrogen profile; No; Oxynitride; X ray photoelectron spectroscopy
|
Indexed keywords
ELECTRIC PROPERTIES;
ELECTRONIC DENSITY OF STATES;
FIELD EFFECT TRANSISTORS;
HIGH TEMPERATURE OPERATIONS;
HOT CARRIERS;
INTERFACES (MATERIALS);
MASS SPECTROMETRY;
MOLECULAR STRUCTURE;
NITROGEN;
NITROGEN COMPOUNDS;
RELIABILITY;
X RAY PHOTOELECTRON SPECTROSCOPY;
ATOMIC CONFIGURATION;
INTERFACE STATE DENSITY;
NITROGEN PROFILE;
OXYNITRIDE;
SECONDARY ION MASS SPECTROSCOPY;
CMOS INTEGRATED CIRCUITS;
|
EID: 0033723723
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.39.2158 Document Type: Article |
Times cited : (3)
|
References (11)
|