Band gap states of Cr in the lower part of the SiC band gap

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 471-474

  Pasold, G ^a   Achtziger, N ^b   Grillenberger, J ^a   Witthuhn, W ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; ENERGY GAP; ION IMPLANTATION; RADIOACTIVE TRACERS; RADIOISOTOPES; SILICON CARBIDE; VANADIUM;

BAND GAP STATES; ELEMENTAL TRANSMUTATION; RECOIL IMPLANTATION; VALENCE BAND EDGE;

CHROMIUM;

EID: 0346453715     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.471     Document Type: Article

References (13)

1. J. Baur, M. Kunzer and J. Schneider, Phys.Stat.Sol.A 162 (1997), p. 153.
2. T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W.J. Choyke, A. Schöner and N. Nordell, Phys.Stat.Sol.A 162 (1997), p. 199.
3. N. Achtziger, W. Witthuhn, Phys.Rev.B 57 (1998), p. 12181.
4. A.A. Lebedev, Semiconductors 33 (1999), p. 107.
5. J. Grillenberger, N. Achtziger, R. Sielemann and W. Witthuhn, J.Appl.Phys., at press.
6. N. Achtziger, G. Pasold, R. Sielemann, C. Hülsen, J. Grillenberger and W. Witthuhn, submitted to Phys.Rev.B.
7. H. Overhof, Mat.Sci.For. 258-263 (1997), p. 677.
8. N. Achtziger, H. Gottschalk, T. Licht, J. Meier, U. Reislöhner, M. Rüb, W.Witthuhn: Appl.Phys.Lett. 66 (1995), p. 2370.
9. P. Blood, J.W. Orton: The electrical Characterization of Semiconductors: Majority Carriers and Electron States (Academic Press, London, 1992) p. 407.
10. J. Grillenberger, N. Achtziger, F. Günther and W. Witthuhn, Appl.Phys.Lett. 73 (1998), p. 3698.
11. N. Achtziger, J. Grillenberger, W. Witthuhn, Mat.Sci.For. 264-268 (1998), p. 541.
12. V.V. Afanasev, M. Bassler, G. Pensl, M.J. Schulz and E. Stein von Kamienski, J.Appl.Phys. 79 (1996), p. 3108.
13. H. Overhof, University of Paderborn, Germany, private communication.