Barrier-type AC surface photovoltage in silicon with a copper-contaminated surface

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 10, 2002, Pages 5976-5977

  Shimizu, Hirofumi ^a  

^a NIHON UNIVERSITY   (Japan)

Author keywords

AC surface photovoltage; Copper; Hydrofluoric acid; Schottky barrier; Silicon wafer

Indexed keywords

CHEMICAL ANALYSIS; CONTAMINATION; COPPER; CRYSTAL GROWTH FROM MELT; ELECTRIC CONTACTS; ELECTRON TRAPS; HYDROFLUORIC ACID; OXIDATION; PHOTOCURRENTS; REDUCTION; SCHOTTKY BARRIER DIODES; SILICON WAFERS;

BARRIER TYPE AC SURFACE PHOTOVOLTAGE; COPPER CONTAMINATED SURFACE; ELECTRON CAPTURE; SCANNING PHOTON MICROSCOPE;

SEMICONDUCTING SILICON;

EID: 0036819380     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.5976     Document Type: Article

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