A reflectance anisotropy spectroscopy study of GaSb(100)c(2 × 6) surfaces prepared by Sb decapping

Surface Science

Volumn 352-354, Issue , 1996, Pages 771-775

  Goletti, C ^a   Resch Esser, U ^b   Foeller, J ^b   Esser, N ^b   Richter, W ^b   Brar, B ^c   Kroemer, H ^c  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c University of California   (United States)

Author keywords

Gallium antimonide; Reflection spectroscopy; Single crystal surfaces; Surface structure

Indexed keywords

ANISOTROPY; ANTIMONY; AUGER ELECTRON SPECTROSCOPY; BAND STRUCTURE; ELECTROOPTICAL EFFECTS; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; SPECTROSCOPY; SURFACES;

ANTIMONY DECAPPING; BAND BENDING; GALLIUM ANTIMONIDE; OPTICAL ANISOTROPY; REFLECTANCE ANISOTROPY SPECTROSCOPY;

SURFACE STRUCTURE;

EID: 0030142345     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01226-5     Document Type: Article

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