Formation of vacancy-impurity complexes in highly As- and P-doped Si

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 765-768

  Ranki, V ^a   Saarinen, K ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

Compensation; Doping; Si; Vacancy

Indexed keywords

ANNEALING; COMPLEXATION; CRYSTAL DEFECTS; DOPING (ADDITIVES); DOPPLER EFFECT; ELECTRIC CONDUCTIVITY; ELECTRON IRRADIATION; MOLECULAR ORIENTATION; SILICON;

ELECTRICAL COMPENSATION; POSITRON LIFETIME MEASUREMENTS; VACANCIES;

CRYSTAL IMPURITIES;

EID: 0346055268     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.117     Document Type: Conference Paper

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