Positron annihilation studies of silicon-rich SiO2 produced by high dose ion implantation

Applied Physics Letters

Volumn 70, Issue 4, 1997, Pages 496-498

  Ghislotti, G ^a,c   Nielsen, B ^a   Asoka Kumar, P ^a   Lynn, K G ^a   Di Mauro, L F ^a   Corni, F ^b   Tonini, R ^b  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c CORECOM ^*  (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012945254     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118315     Document Type: Article

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