Electrical characterization of a-SiOx:H produced by plasma immersion ion implantation

Solid-State Electronics

Volumn 43, Issue 3, 1999, Pages 599-607

  Chen, S M ^a,b   Shannon, J M ^a   Gwilliam, R M ^a   Sealy, B J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYING; AMORPHOUS FILMS; AMORPHOUS SILICON; ENERGY GAP; ION IMPLANTATION; OXYGEN; SEMICONDUCTING SILICON; SYNTHESIS (CHEMICAL);

FRENKEL-POLE CONDUCTIONS; PLASMA IMMERSION ION IMPLANTATION METHOD;

SEMICONDUCTING FILMS;

EID: 0033100778     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00290-1     Document Type: Article

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