Electrical properties of thermally oxidized porous silicon

Journal of the Electrochemical Society

Volumn 143, Issue 9, 1996, Pages 2972-2980

  Wu, Z Y ^a   Hall, S ^a   Keen, J M ^b,c  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b DRA   (United Kingdom)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; MOS DEVICES; OXIDES; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; STRAIN; STRESSES; THERMOOXIDATION;

CONDUCTION BANDEDGE; CONDUCTION LIMITING MECHANISMS; ELECTRICAL ISOLATION; ELECTRON TRAPS; INTERFACE STATE DENSITY; METAL OXIDE SEMICONDUCTOR CAPACITORS; OXIDIZED POROUS SILICON; POOLE-FRENKEL THERMALLY ACTIVATED TYPE; TUNNELING CONDUCTION;

POROUS SILICON;

EID: 0030245014     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837135     Document Type: Article

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