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Volumn 362, Issue 1-2, 2004, Pages 275-281

Influence of high pressure and temperature on defect structure of silicon crystals implanted with N or Si ions

Author keywords

Defect structure; High pressure treatment; Implanted silicon; X ray diffraction

Indexed keywords

AMORPHOUS FILMS; CRYSTAL DEFECTS; CRYSTALS; DISLOCATIONS (CRYSTALS); HIGH PRESSURE EFFECTS; HIGH TEMPERATURE EFFECTS; HYDROSTATIC PRESSURE; INTERFACES (MATERIALS); ION IMPLANTATION; NITROGEN; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

EID: 0345414730     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-8388(03)00598-X     Document Type: Conference Paper
Times cited : (5)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.