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Volumn 362, Issue 1-2, 2004, Pages 275-281
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Influence of high pressure and temperature on defect structure of silicon crystals implanted with N or Si ions
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Author keywords
Defect structure; High pressure treatment; Implanted silicon; X ray diffraction
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Indexed keywords
AMORPHOUS FILMS;
CRYSTAL DEFECTS;
CRYSTALS;
DISLOCATIONS (CRYSTALS);
HIGH PRESSURE EFFECTS;
HIGH TEMPERATURE EFFECTS;
HYDROSTATIC PRESSURE;
INTERFACES (MATERIALS);
ION IMPLANTATION;
NITROGEN;
PHOTOLUMINESCENCE;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION ANALYSIS;
DEFECT STRUCTURE;
ROCKING CURVES;
SILICON;
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EID: 0345414730
PISSN: 09258388
EISSN: None
Source Type: Journal
DOI: 10.1016/S0925-8388(03)00598-X Document Type: Conference Paper |
Times cited : (5)
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References (13)
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