Low temperature growth of SiO2 on SiC by plasma enhanced chemical vapor deposition for power device applications

Thin Solid Films

Volumn 427, Issue 1-2, 2003, Pages 142-146

  Mandracci, P ^a   Ferrero, S ^a   Ricciardi, C ^a   Scaltrito, L ^a   Richieri, G ^b   Sgorlon, C ^b  

^a POLITECNICO DI TORINO   (Italy)

^b IRCI International Rectifier Corporation Italia   (Italy)

Author keywords

High frequency capacitance voltage; Plasma enhanced chemical vapor deposition; Silicon carbide; Silicon oxide

Indexed keywords

ENERGY GAP; FILM GROWTH; SCHOTTKY BARRIER DIODES; SEMICONDUCTING FILMS; SILICA; SILICON WAFERS; SPECTROSCOPIC ANALYSIS;

OPTICAL SPECTROSCOPY;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 0037416655     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01163-X     Document Type: Conference Paper

References (11)

1. Bhatanagar M., Baliga B.J. IEEE Trans. Elec. Dev. 40:1993;645.
2. Lucovsky G., Niimi H., Golz A., Kurz H. Appl. Surf. Sci. 123-124:1998;435.
3. Golz A., Gross S., Janssen R., Stein von Kamienski E., Kurz H. Diaomd Relat. Mat. 6:1997;1420.
4. Augustyniak E., Chew K.H., Shohet J.L., Woodsa R.C. J. Appl. Phys. 85:1999;87.
5. Viana C.E., Morimoto N.I., Bonnaud O. Microelectron. Reliab. 40:2000;613.
6. Golz A., Gross S., Janssen R., Stein von Kamienski E., Kurz H. Mater. Sci. Eng. B. 46:1997;363.
7. Swanepoel R. J. Phys. E. 16:1983;1214.
8. Street R.A. Adv. Phys. 25:1976;397.
9. Giorgis F., Pirri C.F. Nalwa H.S. Silicon Based Materials and Devices, vol. 1. 2001;187-235 Academic Press, London.
10. Alok D., McLarty P.K., Baliga B.J. Appl. Phys. Lett. 64:1994;2845.
11. S. Ferrero, F. Giorgis, C.F. Pirri, P. Mandracci, C. Ricciardi, L. Scaltrito, C. Sgorlon, G. Richieri, L. Merlin, Proceedings Second National Meeting on SiC, Polytechnic of Torino, 2002.