MOCVD of GaN Films on Si Substrates Using a New Single Precursor

Bulletin of the Korean Chemical Society

Volumn 24, Issue 7, 2003, Pages 953-956

  Song, Seonmi ^a   Lee, Sun Sook ^a   Yu, Seung Ho ^a   Chung, Taek Mo ^a   Kim, Chang Gyoun ^a   Lee, Soon Bo ^b   Kim, Yunsoo ^a  

^a Korea Research Institute of Chemical Technology   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

Azidodiethylgallium methylamine adduct; Hexagonal gallium nitride; Metal organic chemical vapor deposition; Single precursor

Indexed keywords

AZIDODIETHYLGALLIUM METHYLAMINE; GALLIUM NITRATE; METHYLAMINE; SILICON; UNCLASSIFIED DRUG;

ARTICLE; CHEMICAL PROCEDURES; FILM; METAL ORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; STOICHIOMETRY; TEMPERATURE; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0345307609     PISSN: 02532964     EISSN: None     Source Type: Journal    
DOI: 10.5012/bkcs.2003.24.7.953     Document Type: Article

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