Electronic structures of Bi4-xLaxTi3O12 and Bi4ZrxTi3-xO12 Single crystals studied by soft-x-ray spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 9 B, 2003, Pages 6226-6229

  Higuchi, Tohru ^a   Moriuchi, Yoshiyuki ^a   Noguchi, Yuji ^b,c   Miyayama, Masaru ^b   Shin, Shik ^d,e   Tsukamoto, Takeyo ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^c PREST   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

^e RIKEN   (Japan)

Author keywords

Bi4 xLaxTi3O12; Bi4Ti3 xZrxO12; Electronic structure; Lattice constant; Single crystal; Soft X ray emission spectroscopy (SXES); Ti O hybridization effect; X ray absorption spectroscopy (XAS)

Indexed keywords

BOND STRENGTH (CHEMICAL); BONDING; DOPING (ADDITIVES); ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; LANTHANUM; LATTICE CONSTANTS; SINGLE CRYSTALS; X RAY ANALYSIS;

HYBRIDIZATION EFFECT; SOFT X RAY EMISSION SPECTROSCOPY; VALENCE; X RAY ABSORPTION SPECTROSCOPY;

BISMUTH COMPOUNDS;

EID: 0345171566     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.6226     Document Type: Article

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