Growth of good quality InGaN multiple quantum wells by MOCVD

Journal of Crystal Growth

Volumn 260, Issue 3-4, 2004, Pages 322-326

  Viswanath, Annamraju Kasi ^a,d   Lee, J I ^a   Kim, S T ^b   Kim, Dongho ^c  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Chungbuk National University   (South Korea)

^c Yonsei University   (South Korea)

^d Ctr for Mat for Info Technology   (India)

Author keywords

A1. Nanostructures; A3. Metalorganic chemical vapor deposition; A3. Quantum wells; B2. Semiconducting III V materials; B3. Light emitting diodes

Indexed keywords

CRYSTAL LATTICES; CRYSTAL STRUCTURE; ENERGY GAP; GROWTH (MATERIALS); LIGHT EMITTING DIODES; LOW TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; NITRIDES; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SUBSTRATES; SUPERFLUID HELIUM; TEMPERATURE MEASUREMENT;

COMPOSITIONAL FLUCTUATIONS; OPTICAL CRYSTALS; OPTICAL PHONONS; ROOM TEMPERATURE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0344740773     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.08.076     Document Type: Article

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