Recrystallisation and dopant diffusion in amorphised germanium layers upon pulsed laser annealing

Journal of Alloys and Compounds

Volumn 362, Issue 1-2, 2004, Pages 265-268

  Klinger, D ^a   Auleytner, J ^a   Barcz, A ^a   Zymierska, D ^a  

^a INSTITUTE OF PHYSICS   (Poland)

Author keywords

Amorphous materials; Crystal growth; Impurities in semiconductors; Laser processing; Nanostructures; Semiconductors; Surface electron diffraction (RHEED); Thermal analysis; Thin films

Indexed keywords

AMORPHIZATION; ANNEALING; CRYSTAL GROWTH; DIFFUSION; DOPING (ADDITIVES); ELECTRON DIFFRACTION; ION IMPLANTATION; PULSED LASER APPLICATIONS; RECRYSTALLIZATION (METALLURGY); SECONDARY ION MASS SPECTROMETRY; THIN FILMS;

PULSED LASER ANNEALING;

GERMANIUM;

EID: 0344466350     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-8388(03)00596-6     Document Type: Conference Paper

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