A new nucleation-site-control excimer-laser-crystallization method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 5 A, 2001, Pages 3049-3054

  Nakata, M ^a   Inoue, K ^a   Matsumura, M ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Excimer laser annealing; Lateral grain growth; Phase shift mask; Poly Si; Thin film transistor

Indexed keywords

ANNEALING; CRYSTALLIZATION; GRAIN GROWTH; IRRADIATION; MASKS; NUCLEATION; PHASE SHIFTERS; SCANNING ELECTRON MICROSCOPY; SILICON; THERMAL CONDUCTIVITY; THIN FILM TRANSISTORS;

EXCIMER-LASER ANNEALING; EXCIMER-LASER CRYSTALLIZATION;

EXCIMER LASERS;

EID: 0035328730     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.3049     Document Type: Article

References (10)