Lateral solid-phase recrystallization from the crystal seed selectively formed by excimer laser annealing in Ge-ion-implanted amorphous silicon films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 9 A, 2000, Pages 5063-5068

  Seo, Jin Wook ^a   Akiyama, Satoru ^a   Aya, Yoichiro ^b   Nohda, Tomoyuki ^b   Hamada, Hiroki ^b   Kajiyama, Kenji ^c   Kanaya, Masatoshi ^c   Kuwano, Hiroshi ^a  

^a KEIO UNIVERSITY   (Japan)

^b SANYO ELECTRIC CO LTD   (Japan)

^c Ion Eng Res Institute Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; ELECTRIC PROPERTIES; EXCIMER LASERS; GERMANIUM; GRAIN BOUNDARIES; ION IMPLANTATION; POLYCRYSTALLINE MATERIALS; RECRYSTALLIZATION (METALLURGY);

CRYSTAL SEED; LATERAL SOLID-PHASE RECRYSTALLIZATION;

THIN FILM TRANSISTORS;

EID: 0034268728     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.5063     Document Type: Article

References (16)

1. K. Ishibashi, T. Yamanaka and K. Shimohigashi: IEEE J. Solid-State Circuits 25 (1990) 55.
2. A. Mimura, N. Konishi, K. Ono, J. Ohwada, Y. Hosokawa, Y. Ono, T. Suzuki, K. Miyata and H. Kawakami: IEEE Trans. Electron Devices 36 (1989) 351.
3. R. B. Iverson and R. Reif: J. Appl. Phys. 57 (1985) 5169.
4. H. Kuriyama, T. Nohda, S. Ishida, T. Kuwahara, S. Noguchi, S. Kiyama, S. Tsuda and S. Nakano: Jpn. J. Appl. Phys. 32 (1993) 6190.
5. K. Shimizu, O. Sugiura and M. Matsumura: IEEE Trans. Electron Devices 40 (1993) 112.
6. H. Kumomi, T. Yonchara and T. Noma: Appl. Phys. Lett. 59 (1991) 3565.
7. J. S. Im, R. S. Sposili and M. A. Crowder: Appl. Phys. Lett. 70 (1997) 3434.
8. K. Ishikawa, M. Ozawa, C.-H. Oh and M. Matsumura: Jpn. J. Appl. Phys. 37 (1998) 731.
9. M. K. Kang, K. Akashi, T. Matsui and H. Kuwano: Solid-State Electron. 38 (1995) 383.
10. M. K. Kang, T. Matsui and H. Kuwano: J. Mater. Sci.: Mater. Electron. 7 (1996) 451.
11. H. Watanabe, H. Miki, S. Sugai, K. Kawasaki and T. Kioka: Jpn. J. Appl. Phys. 33 (1994) 4491.
12. D. H. Lowndess, S. J. Pennycook, G. E. Jellison, Jr. and D. N. Mashburn: J. Mater. Res. 2 (1987) 648.
13. J. S. Im, H. J. Kim and M. O. Thompson: Appl. Phys. Lett. 63 (1993) 1969.
14. H. J. Kim and J. S. Im: Mater. Res. Soc. Symp. Proc. 358 (1995) 903.
15. M. K. Kang: Dr. Thesis. Faculty of Science, Keio University, Yokohama, 1995.
16. S. Kambayashi, S. Onga, I. Mizushima, K. Higuchi and H. Kuwano: Ext. Abstr. 21st Meet. 1989, Solid State Devices and Materials, p. 169.