메뉴 건너뛰기




Volumn 144, Issue 2, 1997, Pages 634-640

Kinetics of power deposition and silane dissociation in radio-frequency discharges

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; DEPOSITION; DISSOCIATION; ELECTRODES; ELECTRONS; MOLECULES; SILANES;

EID: 0031075322     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837459     Document Type: Article
Times cited : (17)

References (43)
  • 34
    • 0343084224 scopus 로고
    • G. Bruno, P Capezzuto, and A. Madan, Editors, Academic Press, Inc., San Diego, CA
    • J. Perrin, in Plasma Deposition of Amorphous Silicon-Based Materials, G. Bruno, P Capezzuto, and A. Madan, Editors, pp. 177-241, Academic Press, Inc., San Diego, CA (1995).
    • (1995) Plasma Deposition of Amorphous Silicon-Based Materials , pp. 177-241
    • Perrin, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.