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Volumn 290-291, Issue , 1996, Pages 427-434
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Plasma and surface diagnostics during plasma-enhanced chemical vapor deposition of SiO2 from SiH4/O2/Ar discharges
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Author keywords
Attenuated total reflection fourier transform infrared spectroscopy; Intermetal dielectric; Plasma enhanced chemical vapor deposition; Silicon dioxide
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
COMPOSITION EFFECTS;
FILM GROWTH;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
INTERMETALLICS;
OXIDATION;
PLASMA DIAGNOSTICS;
SILANES;
SILICA;
SUBSTRATES;
THIN FILMS;
ATTENUATED TOTAL REFLECTION (ATR);
LANGMUIR PROBE MEASUREMENTS;
OPTICAL EMISSION ACTINOMETRY;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
DIELECTRIC FILMS;
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EID: 0030397460
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(96)09024-4 Document Type: Article |
Times cited : (25)
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References (37)
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