Electronic structure and temperature dependence of excitons in GaN

Materials Research Society Symposium - Proceedings

Volumn 423, Issue , 1996, Pages 675-680

  Buyanova, I A ^a   Bergman, J P ^a   Li, W ^a   Monemar, B ^a   Amano, H ^a   Akasaki, I ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRONIC STRUCTURE; ENERGY GAP; EXCITONS; LIGHT MEASUREMENT; NITRIDES; PHOTOLUMINESCENCE; SAPPHIRE; SILICON CARBIDE; SUBSTRATES; THERMAL EFFECTS; THERMAL EXPANSION;

GALLIUM NITRIDES; VALENCE BAND SPLITTING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030417065     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-423-675     Document Type: Conference Paper

References (11)