Ion mass and scaling effects in PIII simulation

Surface and Coatings Technology

Volumn 136, Issue 1-3, 2001, Pages 117-121

  Keller, G ^a   Mandl S ^a   Rude U ^b   Rauschenbach, B ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ION IMPLANTATION; PLASMA DENSITY; PLASMA SHEATHS; PLASMA SIMULATION; SILICON;

PLASMA IMMERSION ION IMPLANTATION (PSII);

PLASMA SOURCES;

EID: 0343395851     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(00)01039-2     Document Type: Article

References (23)

1. J.R. Conrad, J. Radtke, R.A. Dodd, F.J. Worzala, J. Appl. Phys. 62 (1987) 4591.
2. J. Tendys, I.J. Donnelly, M.J. Kenny, J.T.A. Pollock, Appl. Phys. Lett. 53 (1988) 2143.
3. Z. Fan, X. Zeng, P.K. Chu, C. Chan, M. Watanabe, Nucl. Instrum. Methods B 155 (1999) 75.
4. I. Großhans, K. Volz, W. Ensinger, B. Rauschenbach, Nucl. Instrum. Methods B 155 (1999) 67.
5. R.A. Yankov, S. Mändl, Annalen der Physik (2001), in press.
6. Semiconductor Industry Association, The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA, 1994, pp. 110-113.
7. Proceedings of the XIIth International Conference on Ion Implantation Technology, 22-26 June 1998, Kyoto, Japan.
8. S. Mändl, N.P. Barradas, J. Brutscher, R. Günzel, W. Möller, Nucl. Instrum. Methods B 127/128 (1997) 996.
9. P. Huber, G. Keller, J.W. Gerlach, S. Mändl, W. Assmann, B. Rauschenbach, Nucl. Instrum. Methods B 161/163 (2000) 1085.
10. P.A. Watterson, J. Phys D 22 (1989) 1300.
11. T.E. Sheridan, Appl. Phys. Lett. 68 (1996) 1918.
12. Z.M. Zeng, T.K. Kwok, X.B. Tian, B.Y. Tang, P.K. Chu, J. Appl. Phys. 86 (1999) 120.
13. M. Paulus, L. Stals, U. Rüde, B. Rauschenbach, J. Appl. Phys. 85 (1999) 761.
14. G. Keller, M. Paulus, S. Mändl, B. Stritzker, B. Rauschenbach, Nucl. Instrum. Methods B 148 (1999) 64.
15. V. Rainieri, S.U. Campisano, Appl. Phys. Lett. 66 (1995) 3654.
16. P.F.P. Fichtner, J.R. Kaschny, R.A. Yankov, A. Mücklich, U. Kreissig, W. Skorupa, Appl. Phys. Lett. 70 (1997) 732.
17. M. Saggio, V. Rainieri, R. Letor, F. Frisina, IEEE Electron. Device Lett. 18 (1997) 333.
18. C.D. Child, Phys. Rev. 32 (1911) 492.
19. M.A. Lieberman, J. Appl. Phys. 66 (1989) 2926.
20. S. Mändl, R. Günzel, W. Möller, J. Phys. D: Appl. Phys. 31 (1998) 1109.
21. L. Stals, U. Rüde, M. Paulus, B. Rauschenbach, Proceedings of the Conference on Comparative Techniques and Applications, CTAC97, Adelaide 1997, World Scientific, 1997, p. 149.
22. J.F. Ziegler, J.P. Biersack, U. Littmark, The Stopping and Range of Ions in Solids, Pergamon Press, New York, 1985.
23. N. Matsunami, Y. Yamamura, Y. Itikawa et al., At. Data Nucl. Data Tables 31 (1984) 1.