Synthesis of buried silicon oxide layers by water plasma immersion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 155, Issue 1, 1999, Pages 67-74

  Grosshans I ^a   Volz, K ^a   Ensinger, W ^a   Rauschenbach, B ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC POTENTIAL; EMISSION SPECTROSCOPY; INTERFACES (MATERIALS); ION IMPLANTATION; PLASMA APPLICATIONS; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON WAFERS; SYNTHESIS (CHEMICAL); THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON RECOIL DETECTION ANALYSIS (ERDA); WATER PLASMA IMMERSION IMPLANTATION;

SILICA;

EID: 0002482195     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00398-5     Document Type: Article

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