Monte Carlo simulation of electron velocity in degenerate GaAs

IEEE Electron Device Letters

Volumn 18, Issue 6, 1997, Pages 258-260

  Pantoja, Jose Miguel Miranda ^a,b   Franco, Jose Luis Sebastian ^a  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^b IEEE   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; MONTE CARLO METHODS; PHONONS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

LONGITUDINAL OPTICAL (LO) PHONON PLASMA COUPLING EFFECTS; PAULI EXCLUSION PRINCIPLE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031165608     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.585347     Document Type: Article

References (17)

1. T. Gonzalez and D. Pardo, "Physical models of ohmic contact for Monte Carlo device simulation," Solid-State Electron., vol. 39 no. 4, pp. 555-562, 1996.
2. J. Mateos, T. Gonzalez, D. Pardo, P. Tadyszak, F. Danneville, and A. Cappy, "Numerical and experimental analysis of the static characteristics and noise in ungated recessed MESFET structures," submitted for publication.
3. M. Fischetti and S. E. Laux, "Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures - Part II: Submicrometer MOSFET's," IEEE Trans. Electron Devices, vol. 38, pp. 650-660, Mar. 1991.
4. T. Gonzalez and D. Pardo, "Monte Carlo determination of the intrinsic small-signal equivalent circuit of MESFET's," IEEE Trans. Electron Devices, vol. 42, pp. 605-611, Apr. 1995.
5. P. Lugli and D. K. Ferry, "Degeneracy in the ensemble Monte Carlo method for high-field transport in semiconductors," IEEE Trans. Electron Devices, vol. ED-32, pp. 2431-2437, Nov. 1985.
6. C. Peschke, "Interaction of electrons with coupled plasmon phonons in GaAs," J. Appl. Phys., vol. 74, no. 1, pp. 327-334, 1993.
7. B. A. Sanborn, "Nonequilibrium total-dielectric-function approach to the electron Boltzmann equation for inelastic scattering in doped polar semiconductors," Phys. Rev. B, vol. 51, no. 20, pp. 14247-14255, 1995.
8. _, "Electron-electron interactions, coupled plasmon-phonon modes, and mobility in n-type GaAs," Phys. Rev. B, vol. 51, no. 20, pp. 14256-14264, 1995.
9. S. Krishnamurthy and M. Cardona, "Self-consistent calculation of intervalley deformation potentials in GaAs and Ge," J. Appl. Phys., vol. 74, no. 3, pp. 2117-2119, 1993.
10. S. Zollner, S. Gopalan, and M. Cardona, "Microscopic theory of intervalley scattering in GaAs: k dependence of deformation potentials and scattering rates," J. Appl. Phys, vol. 68, no. 4, pp. 1682-1693, 1990.
11. K. Kash, "Hot electron luminiscence: A comparison of GaAs and InP," Phys. Rev. B, vol. 47, no. 3, pp. 1221-1227, 1993.
12. M. Fischetti and S. E. Laux, "Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures - Part I: Homogeneous transport," IEEE Trans, Electron Devices, vol. 38, pp. 634-649, Mar. 1991.
13. C. Jacoboni and P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation. Berlin: Springer-Verlag, 1989.
14. W. T. Masselink, "Electron velocity in GaAs: Bulk and selectively doped heterostructures," Semicond. Sci. Technol., vol. 4, pp. 503-512, 1989.
15. J. G. Ruch and G. S. Kino, "Measurement of the velocity-field characteristic of Gallium Arsenide," Appl. Phys. Lett., vol. 10, no. 2, pp. 40-42, 1967.
16. N. Braslau and P. S. Hauge, "Microwave measurement of the velocityfield characteristic of GaAs," IEEE Trans. Electron Devices, vol. ED-17, pp. 616-622, Aug. 1970.
17. W. T. Masselink, personal communication.