메뉴 건너뛰기




Volumn 36, Issue 22, 2000, Pages 1849-1851

Long wavelength InGaAs-InGaAlAs-InP diode lasers grown by solid-source molecular-beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; MOLECULAR BEAM EPITAXY; MOLECULAR SPECTROSCOPY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; X RAY DIFFRACTION ANALYSIS;

EID: 0342468816     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20001328     Document Type: Article
Times cited : (3)

References (10)
  • 2
  • 4
    • 0031118333 scopus 로고    scopus 로고
    • 2.0-μm single-mode operation of InGaAs-InGaAsP distributed-feedback buried-heterostructure quantum-well lasers
    • OISHI, M., YAMAMOTO. M., and KASAYA, K.: '2.0-μm single-mode operation of InGaAs-InGaAsP distributed-feedback buried-heterostructure quantum-well lasers', IEEE Photonics Technol. Lett., 1997, 9, pp. 431-433
    • (1997) IEEE Photonics Technol. Lett. , vol.9 , pp. 431-433
    • Oishi, M.1    Yamamoto, M.2    Kasaya, K.3
  • 5
    • 0032038579 scopus 로고    scopus 로고
    • Characteristics dependence on confinement structure and single-mode operation in 2-μm compressively strained InGaAs-InGaAsP quantum-well lasers
    • DONG, J., UBUKATA, A., and MATSUMOTO, K.: 'Characteristics dependence on confinement structure and single-mode operation in 2-μm compressively strained InGaAs-InGaAsP quantum-well lasers', IEEE Photonics Technol. Lett., 1998, 10, pp. 513-515
    • (1998) IEEE Photonics Technol. Lett. , vol.10 , pp. 513-515
    • Dong, J.1    Ubukata, A.2    Matsumoto, K.3
  • 6
    • 0029352856 scopus 로고
    • Ultrahigh temperature and ultrahigh speed operation of 1.3μm strain-compensated AlGaInAs/InP uncooled laser diodes
    • WANG, M.C., LIN, W., SHI, T.T., and TU, Y.K.: 'Ultrahigh temperature and ultrahigh speed operation of 1.3μm strain-compensated AlGaInAs/InP uncooled laser diodes', Electron. Lett., 1995, 31, pp. 1584-1585
    • (1995) Electron. Lett. , vol.31 , pp. 1584-1585
    • Wang, M.C.1    Lin, W.2    Shi, T.T.3    Tu, Y.K.4
  • 8
    • 0033530991 scopus 로고    scopus 로고
    • 0 = 122K) of 1.55μm strain-compensated AlGaInAs/AlGaInAs MQW lasers with AlAs/AlInAs multiquantum barrier
    • 0 = 122K) of 1.55μm strain-compensated AlGaInAs/AlGaInAs MQW lasers with AlAs/AlInAs multiquantum barrier', Electron. Lelt., 1999, 35, pp. 51-52
    • (1999) Electron. Lelt. , vol.35 , pp. 51-52
    • Ohnoki, N.1    Okazaki, G.2    Koyama, F.3    Iga, K.4
  • 10
    • 0032760875 scopus 로고    scopus 로고
    • 2.05-μm wavelength InGaAs-InGaAs distributed-feedback multiquantum-well lasers with 10-mW output power
    • MITSUHARA, M., OGASAWARA, M., OISHI, M., SUGIURA, H., and KASAYA, K.: '2.05-μm wavelength InGaAs-InGaAs distributed-feedback multiquantum-well lasers with 10-mW output power', IEEE Photonics Technol. Lett., 1999, 11, pp. 33-35
    • (1999) IEEE Photonics Technol. Lett. , vol.11 , pp. 33-35
    • Mitsuhara, M.1    Ogasawara, M.2    Oishi, M.3    Sugiura, H.4    Kasaya, K.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.