High-performance InGaAs-InGaAlAs 1.83 μm lasers

Electronics Letters

Volumn 36, Issue 7, 2000, Pages 634-636

  Kuang, G K ^a   Bohm G ^a   Grau, M ^a   Rosel G ^a   Amann, M C ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES; THRESHOLD VOLTAGE;

STRAINED-LAYER QUANTUM WELL LASERS; THRESHOLD CURRENT DENSITY;

QUANTUM WELL LASERS;

EID: 0033893811     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000484     Document Type: Article

References (9)

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2. MITSUHARA, M., OGASAWARA, M., OISHI, M., SUGIURA, H., and KASAYA, K.: '2.05-μm wavelength InGaAs-InGaAs distributed-feedback multiquantum-well lasers with 10-mW output power', IEEE Photonics Technol. Lett., 1999, 11, pp. 33-35
3. MAIOROV, M., MENNA, R., KHALFIN, V., MILGAZO, H., MATARESE, R., GARBUZOV, D., and CONNOLLY, J.: '11.5-W CW 1.83-μm diode laser array', IEEE Photonics Technol. Lett., 1999, 11, pp. 961-963
4. WANG, M.C., LIN, W., SHI, T.T., and TU, Y.K.: 'Ultrahigh temperature and ultrahigh speed operation of 1.3μm strain-compensated AlGaInAs/InP uncooled laser diodes', Electron. Lett., 1995, 31, pp. 1584-1585
5. CHEN, T.R., CHEN, P.C., UNGAR, J., NEWKIRK, M.A., OH, S., and BARCHAIM, N.: 'Low-threshold and high-temperature operation of InGaAlAs-InP lasers', IEEE Photonics Technol. Lett., 1997, 9, pp. 17-18
6. HIGASHI, T., SWEENEY, S.J., PHILLIPS, A.F., ADAMS, A.R., O'REILLY, E.P., UCHIDA, T., and FUJII, T.: 'Observation of reduced nonradiative current in 1.3-μm AlGaInAs-InP strained MQW lasers', IEEE Photonics Technol. Lett., 1999, 11, pp. 409-411
7. PARK, S.-H.: 'High temperature characteristics of strained InGaAs/ InGaAlAs quantum well lasers', Jpn. J. Appl. Phys., 1997, 36, (1) pp. 3528-3530
8. 0 = 122K) of 1.55μm strain-compensated AlGaInAs/AlGaInAs MQW lasers with AlAs/AlInAs multiquantum barrier', Electron. Lett., 1999, 35, pp. 51-52
9. HE, X., XU, D., OVTCHINNIKOV, F., MALARAYAP, F., SUPE, R., WILSON, S., and PATEL, R.: 'High power efficient GaInAsP/InP (1.9μm) laser diode arrays', Electron. Lett., 1999, 35, pp. 397-398