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Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 439-442

Electron-Induced Damage Effects in 4H-SiC Schottky Diodes

(5) Castaldini, A a Cavallini, A a Nava, F b Fuochi, P G c Vanni, P c

a UNIVERSITY OF BOLOGNA (Italy)

b UNIVERSITY OF MODENA AND REGGIO EMILIA (Italy)

c CNR (Italy)

Author keywords

4H SiC; DLTS; EBIC; Electron Irradiation; Energy Levels; Radiation Detectors; Traps

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON BEAMS; ELECTRON IRRADIATION; SILICON CARBIDE;

ELECTRON BEAM INDUCED CURRENTS (EBIC);

SCHOTTKY BARRIER DIODES;

EID: 0242665342 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.433-436.439 Document Type: Conference Paper

Times cited : (8)

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