Monte Carlo simulation of vertical MESFETs in 2H, 4H and 6H-SiC

Diamond and Related Materials

Volumn 10, Issue 3-7, 2001, Pages 1283-1286

  Bertilsson, K ^a,b   Dubaric, E ^a,b   Nilsson, H E ^a   Hjelm, M ^a,b   Petersson, C S ^b  

^a MID SWEDEN UNIVERSITY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

4H SiC; 6H SiC; Device modeling; Metal semiconductor field effect transistors (MESFET)

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; MONTE CARLO METHODS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE; THERMAL CONDUCTIVITY OF SOLIDS;

STATIC INDUCTION TRANSISTORS;

MESFET DEVICES;

SILICON CARBIDE;

EID: 0035269296     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(00)00382-4     Document Type: Article

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