First-Principle Theoretical Study on Epitaxial Crystal Growth of GaN

Physica Status Solidi (A) Applied Research

Volumn 188, Issue 2, 2001, Pages 579-582

  Murata, S ^a   Ikenaga, M ^a   Nakamura, K ^a   Tachibana, A ^a   Matsumoto, K ^b  

^a KYOTO UNIVERSITY   (Japan)

^b TAIYO NIPPON SANSO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0242477148     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200112)188:2<579::AID-PSSA579>3.0.CO;2-K     Document Type: Article

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