Physical characterization of thin HfO2 layers by the combined analysis with complementary techniques

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5133, Issue , 2003, Pages 223-232

  Bender, H ^a   Conard, Th ^a   Richard, O ^a   Brijs, B ^a   Petry J ^a   Vandervorst, W ^a   Defranoux, Chr ^b   Boher, P ^b   Rochat, N ^c   Wyon, C ^c   Mack, P ^d   Wolstenholme, J ^d   Vitchev, R ^e   Houssiau, L ^e   Pireaux, J J ^e   Bergmaier, A ^f   Dollinger, G ^f  

^a IMEC   (Belgium)

^b SOPRA   (France)

^c CEA LETI   (France)

^d Thermo VG Scientific   (United Kingdom)

^e UNIVERSITY OF NAMUR   (Belgium)

^f TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DATA REDUCTION; DIELECTRIC MATERIALS; GATES (TRANSISTOR); METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; SILICON COMPOUNDS;

ATOMIC LAYER DEPOSITION (ALD);

HAFNIUM COMPOUNDS;

EID: 0242468973     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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