Virtual substrates for the n- and p-type Si-MODFET grown at very high rates

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 74, Issue 1, 2000, Pages 113-117

  Rosenblad, C ^a   Kummer, M ^a,b   Dommann, A ^b   Muller E ^c   Gusso, M ^d   Tapfer, L ^d   Von Kanel H ^a  

^a ETH ZURICH   (Switzerland)

^b Interstaatliche Fachhochschule T   (Switzerland)

^c PAUL SCHERRER INSTITUTE   (Switzerland)

^d Centro Nazionale per la Ricerca e lo Sviluppo dei Materiali   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SYNTHESIS (CHEMICAL);

LOW-ENERGY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (LEPECVD); MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET);

FIELD EFFECT TRANSISTORS;

EID: 0033730629     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00545-0     Document Type: Article

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