Stacked Ge islands for photovoltaic applications

Science and Technology of Advanced Materials

Volumn 4, Issue 4, 2003, Pages 367-370

  Usami, N ^a   Alguno, A ^a   Ujihara, T ^a   Fujiwara, K ^a   Sazaki, G ^a   Nakajima, K ^a   Sawano, K ^b   Shiraki, Y ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Ge islands; Molecular beam epitaxy; Solar cell; Stranski Krastanov growth mode

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC FIELDS; GROUND STATE; MOLECULAR BEAM EPITAXY; NEODYMIUM LASERS; PHOTOCURRENTS; PHOTOLUMINESCENCE; PHOTOVOLTAIC EFFECTS; QUANTUM EFFICIENCY; SILICON SOLAR CELLS;

STACKED ISLANDS;

GERMANIUM;

EID: 0242405930     PISSN: 14686996     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1468-6996(03)00054-8     Document Type: Article

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