Bombardment-induced ripple topography on GaAs and InP

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 212, Issue 1-4, 2003, Pages 258-263

  Malherbe, Johan B ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

Bombardment induced ripples; Gallium arsenide (GaAs); Indium phosphide (InP); Ion bombardment; Nano technology; Surface diffusion; Surface morphology; Topography

Indexed keywords

ACTIVATION ENERGY; CRYSTALLOGRAPHY; DIFFUSION; MORPHOLOGY; NANOTECHNOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SURFACE TOPOGRAPHY;

RIPPLE TOPOGRAPHY;

ION BOMBARDMENT;

EID: 0242332355     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)01454-X     Document Type: Conference Paper

References (37)

1. Facsko S., Dekorsy T., Koerdt C., Tappe C., Kurz H., Vogt A., Hartnagel H.L. Science. 285:1999;1551.
2. Seah M.P., Spencer S.J., Cumpson P.J., Johnstone I.E. Appl. Surf. Sci. 144-145:1999;151.
3. Malherbe J.B. Chakraborty P. Ion Beam Analysis of Surfaces and Interfaces of Condense Matter System. 2003;Nova Science Publ, New York. Chapter 11.
4. Malherbe J.B. Crit. Rev. Solid State Mater. Sci. 19:1994;129.
5. Malherbe J.B., Odendaal R.Q. Appl. Surf. Sci. 144-145:1999;192.
6. Smentkowski V.S. Prog. Surf. Sci. 64:2000;1.
7. Chason E., Mayer T.M., Kellerman B.K., McIlroy D.T., Howard A.J. Phys. Rev. Lett. 72:1994;3040.
8. Costantini G., Rusponi S., Gianotti R., Boragno C., Valbusa U. Surf. Sci. 416:1998;245.
9. Bradley R.M. Phys. Rev. E. 54:1996;6149.
10. Rost M., Krug J. Phys. Rev. Lett. 75:1995;3894.
11. Cuerno R., Barabási A.-L. Phys. Rev. Lett. 74:1995;4746.
12. Constantini G., Rusponi S., Buatier de Mongeot F., Boragno C., Valbusa U. J. Phys.: Condens. Matter. 13:2001;5875.
13. Carter G. Phys. Rev. B. 59:1999;1669.
14. Cuerno R., Lauritsen K.B. Phys. Rev. E. 52:1995;4853.
15. Makeev M.A., Barabási A.-L. Appl. Phys. Lett. 71:1997;2800.
16. Ramana Murty M.V., Curcic T., Judy A., Cooper B.H., Woll A.R., Brock J.D., Kycia S., Headrick R.L. Phys. Rev. Lett. 80:1998;4713.
17. Park S., Kahng B., Jeong H., Barabási A.-L. Phys. Rev. Lett. 83:1999;3486.
18. Bradley R.M., Harper J.M.E. J. Vac. Sci. Technol. A. 6:1988;2390.
19. Stevie F.A., Kahora P.M., Simons D.S., Chi P. J. Vac. Sci. Technol. A. 6:1988;76.
20. Asomoza R., Merkulov O., Vidal M.A., Salazar B. Appl. Surf. Sci. 126:1998;205.
21. Moon D.W., Kim K.J. J. Vac. Sci. Technol. B. 14:1996;2744.
22. Hofmann S. Appl. Phys. 9:1976;59.
23. Hofmann S., Erlewein J., Zalar A. Thin Solid Films. 43:1977;275.
24. Cirlin E.-H., Vajo J.J., Doty R.E., Hasenberg T.C. J. Vac. Sci. Technol. A. 9:1991;1395.
25. Gries W.H. Benninghoven A., Janssens K.T.F., Tümpner J., Werner H.W. Proc. SIMS VIII. 1991;323 Wiley, Chichester.
26. Duncan S., Smith R., Sykes D.E., Walls J.M. Vacuum. 34:1984;145.
27. Cirlin E.-H., Vajo J.J., Hasenberg T.C. J. Vac. Sci. Technol. B. 12:1994;269.
28. Karen A., Okuno K., Soeda F., Ishitani A. J. Vac. Sci. Technol. A. 9:1991;2247.
29. Karen A., Nakagawa Y., Hatada M., Okuno K., Soeda F., Ishitani A. Surf. Interf. Anal. 23:1995;506.
30. MacLaren S.W., Baker J.E., Finnigan N.L., Loxton C.M. J. Vac. Sci. Technol. A. 10:1992;469.
31. Gericke M., Lill T., Trapp M., Richter C.-E., Hupfer A. Fresenius J. Anal. Chem. 341:1991;31.
32. Friedbacher G., Schwarzbach D., Hansma P.K., Nickel H., Grasserbauer M., Stingeder G.A. Fresenius J. Anal. Chem. 345:1993;615.
33. Duncan S., Smith R., Sykes D.E., Walls J.M. J. Vac. Sci. Technol. A. 1:1983;621.
34. Miethe K., Schwarzbach D., Betz W., Nickel H., Lösch R., Schlapp W., Stingeder G., Grasserbauer M. Benninghoven A., Janssens K.T.F., Tümpner J., Werner H.W. Proc. SIMS VIII. 1991;395 Wiley, Chichester.
35. Malherbe J.B., van der Berg N.G. Surf. Interf. Anal. 22:1994;538.
36. Demanet C.M., Malherbe J.B., van der Berg N.G., Sankar K.V. Surf. Interf. Anal. 23:1995;433.
37. Vajo J.J., Doty R.E., Cirlin E.-H. J. Vac. Sci. Technol. A. 14:1996;2709.