High-field hole transport in strained Si and SiGe by Monte Carlo simulation: Full band versus analytic band models

VLSI Design

Volumn 8, Issue 1-4, 1998, Pages 41-45

  Bufler, F M ^a,b,d,e   Graf, P ^a,c,d   Meinerzhagen, B ^a  

^a UNIVERSITY OF BREMEN   (Germany)

^b Inst für Integrierte Systeme   (Switzerland)

^c Intermetall   (Germany)

^d RWTH AACHEN UNIVERSITY   (Germany)

^e UNIV GRENOBLE ALPES   (France)

Author keywords

Analytic and full band structures; Monte Carlo simulation; Strained Si and SiGe

Indexed keywords

BAND STRUCTURE; MONTE CARLO METHODS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

DRIFT VELOCITY; SATURATION VELOCITY;

CARRIER MOBILITY;

EID: 0032315937     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/1998/65181     Document Type: Article

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