High frequency C-V study of devices based on diamond-like carbon films

Solid-State Electronics

Volumn 48, Issue 2, 2004, Pages 285-289

  Cheng, Xiang ^a   Chen, Chao ^a   Zhou, Haiwen ^a  

^a XIAMEN UNIVERSITY   (China)

Author keywords

Capacitance voltage; Diamond like carbon film; Metal semiconductor metal; Raman spectroscopy; X ray photoelectron spectroscopy

Indexed keywords

ELECTRIC POTENTIAL; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SEMICONDUCTOR DOPING; X RAY PHOTOELECTRON SPECTROSCOPY;

IMPURITY CONCENTRATION;

DIAMOND LIKE CARBON FILMS;

EID: 0242303622     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00313-7     Document Type: Article

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