Electrical behaviour of metal/tetrahedral amorphous carbon/metal structure

Solid-State Electronics

Volumn 43, Issue 2, 1999, Pages 427-434

  Liu, E ^a   Shi, X ^a   Cheah, L K ^a   Hu, Y H ^a   Tan, H S ^a   Shi, J R ^a   Tay, B K ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Metal semiconductor metal (MSM); Ohmic contact; Schottky behaviour; Tetrahedral amorphous carbon (ta C)

Indexed keywords

AMORPHOUS MATERIALS; BAND STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING;

METAL-SEMICONDUCTOR-METAL STRUCTURES;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0033079899     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00257-3     Document Type: Article

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