Effect of recess length on DC and RF performance of gate-recessed AlGaN/ GaN HEMTs

Proceedings IEEE Lester Eastman Conference on High Performance Devices

Volumn , Issue , 2002, Pages 428-435

  Kuliev, A ^a   Kumar, V ^a   Schwindt, R ^a   Selvanathan, D ^a   Dabiran, A M ^b   Chow, P ^b   Adesida, I ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b SVT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; LEAKAGE CURRENTS; MICROWAVES; OHMIC CONTACTS;

RECESS LENGTH;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0242302472     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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